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| Bulletin I25155 rev. D 04/03 ST330C..C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case TO-200AB (E-PUK) 720A Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz It 2 case style TO-200AB (E-PUK) Units A C A C A A KA2s KA2s V s C ST330C..C 720 55 1420 25 9000 9420 405 370 400 to 1600 @ 50Hz @ 60Hz V DRM/V RRM tq TJ typical 100 - 40 to 125 www.irf.com 1 ST330C..C Series Bulletin I25155 rev. D 04/03 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code 04 08 ST330C..C 12 14 16 V DRM /V RRM , max. repetitive peak and off-state voltage V 400 800 1200 1400 1600 VRSM , maximum nonrepetitive peak voltage V 500 900 1300 1500 1700 I DRM /I RRM max. @ TJ = TJ max mA 50 On-state Conduction Parameter I T(AV) Max. average on-state current @ Heatsink temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one-cycle non-repetitive surge current ST330C..C 720 (350) 55 (75) 1420 9000 9420 7570 7920 Units Conditions A C 180 conduction, half sine wave double side (single side) cooled DC @ 25C heatsink temperature double side cooled t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms KA2s t = 8.3ms t = 10ms t = 8.3ms KA2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. I 2t Maximum I2 t for fusing 405 370 287 262 I 2t Maximum I2 t for fusing 4050 0.91 t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 r t2 V TM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Typical latching current V 0.92 (I > x IT(AV)),TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. m 0.57 1.96 600 mA 1000 T J = 25C, anode supply 12V resistive load V (I > x IT(AV)),TJ = TJ max. Ipk= 1810A, TJ = TJ max, tp = 10ms sine pulse 0.58 Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current td tq Typical delay time Typical turn-off time ST330C..C 1000 1.0 Units Conditions A/s Gate drive 20V, 20, tr 1s TJ = TJ max, anode voltage 80% VDRM Gate current 1A, di g/dt = 1A/s s Vd = 0.67% VDRM, TJ = 25C ITM = 550A, TJ = TJ max, di/dt = 40A/s, VR = 50V dv/dt = 20V/s, Gate 0V 100, tp = 500s 100 2 www.irf.com ST330C..C Series Bulletin I25155 rev. D 04/03 Blocking Parameter dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current ST330C..C 500 50 Units Conditions V/s mA TJ = TJ max. linear to 80% rated VDRM TJ = TJ max, rated V DRM /V RRM applied Triggering Parameter PGM Maximum peak gate power ST330C..C 10.0 2.0 3.0 20 Units Conditions W A TJ = TJ max, t p 5ms TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, t p 5ms PG(AV) Maximum average gate power IGM +VGM -VGM Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage TYP. IGT DC gate current required to trigger 200 100 50 2.5 VGT DC gate voltage required to trigger IGD VGD DC gate current not to trigger DC gate voltage not to trigger 1.8 1.1 V 5.0 MAX. 200 3.0 10 0.25 mA V V mA TJ = TJ max, tp 5ms TJ = - 40C TJ = 25C TJ = 125C TJ = - 40C TJ = 25C TJ = 125C Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied TJ = TJ max Thermal and Mechanical Specification Parameter TJ Tstg Max. operating temperature range Max. storage temperature range ST330C..C -40 to 125 -40 to 150 0.09 0.04 0.02 0.01 9800 (1000) Units Conditions C DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10% K/W N (Kg) g wt Approximate weight Case style 83 TO - 200AB (E-PUK) See Outline Table www.irf.com 3 ST330C..C Series Bulletin I25155 rev. D 04/03 RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Sinusoidal conduction Rectangular conduction Conduction angle Single Side Double Side 180 120 90 60 30 0.012 0.014 0.017 0.025 0.043 0.011 0.012 0.015 0.022 0.036 Single Side Double Side 0.008 0.014 0.019 0.026 0.043 0.007 0.013 0.017 0.023 0.037 K/W TJ = TJ max. Units Conditions Ordering Information Table Device Code ST 1 33 2 0 3 C 4 16 5 C 6 1 7 8 1 2 3 4 5 6 7 - Thyristor Essential part number 0 = Converter grade C = Ceramic Puk Voltage code: Code x 100 = VRRM (See Voltage Rating Table) C = Puk Case TO-200AB (E-PUK) 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/sec (Standard selection) L = 1000V/sec (Special selection) 4 www.irf.com ST330C..C Series Bulletin I25155 rev. D 04/03 Outline Table ANODE TO GATE CREEPAGE DISTANCE: 11.18 (0.44) MIN. STRIKE DISTANCE: 7.62 (0.30) MIN. 25.3 (0.99) DIA. MAX. 0.3 (0.01) MIN. 14.1 / 15.1 (0.56 / 0.59) 0.3 (0.01) MIN. 25.3 (0.99) DIA. MAX. GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE 40.5 (1.59) DIA. MAX. 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19) Case Style TO-200AB (E-PUK) 25 5 All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 42 (1.65) MAX. 28 (1.10) Maximum Allowable Heats Temperature (C) ink 130 120 110 100 90 80 70 0 30 Maximum Allowable Heatsink T emperature (C) S 330C..C S T eries (S ingle S Cooled) ide RthJ-hs (DC) = 0.09 K/ W 130 120 110 100 90 80 70 60 50 40 30 20 0 30 S 330C..C S T eries (S ingle S ide Cooled) R thJ-hs (DC) = 0.09 K/ W Conduction Angle Conduction Period 60 90 120 180 60 90 120 180 DC 50 100 150 200 250 300 350 400 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 100 200 300 400 500 600 700 800 900 Average On-s tate Current (A) Fig. 2 - Current Ratings Characteristics www.irf.com 5 ST330C..C Series Bulletin I25155 rev. D 04/03 Maximum Allowable Heatsink T emperature (C) Maximum Allowable Heatsink T emperature (C) 130 120 110 100 90 80 70 60 50 40 30 20 0 200 30 130 120 110 100 90 80 70 60 50 40 30 20 10 0 30 60 S 330C..C S T eries (Double S Cooled) ide RthJ-hs (DC) = 0.04 K/ W S 330C..C S T eries (Double S Cooled) ide RthJ-hs (DC) = 0.04 K/ W Conduction Angle Conduction Period 90 120 180 DC 200 400 600 800 1000 1200 1400 1600 Average On-state Current (A) Fig. 4 - Current Ratings Characteristics 60 90 120 180 400 600 800 1000 Average On-state Current (A) Fig. 3 - Current Ratings Characteristics Maximum Average On-state Power Los (W) s 1400 1200 1000 800 600 Conduction Angle Maximum Average On-state Power Los (W) s 1800 1600 1400 1200 180 120 90 60 30 R Limit MS DC 180 120 90 60 30 MS 1000 R Limit 800 600 400 200 0 0 200 400 600 800 1000 1200 Average On-state Current (A) Fig. 6- On-state Power Loss Characteristics Conduction Period 400 200 0 0 100 200 300 400 500 600 700 800 Average On-s tate Current (A) Fig. 5- On-state Power Loss Characteristics S 330C..C S T eries T = 125C J S 330C..C S T eries T = 125C J Peak Half S Wave On-state Current (A) ine Peak Half S Wave On-state Current (A) ine 8000 7500 7000 6500 6000 5500 5000 4500 4000 3500 1 At Any R ated Load Condition And With R ated VRRM Applied Following S urge. Initial T = 125C J @60 Hz 0.0083 s @50 Hz 0.0100 s 9000 8500 Maximum Non R epetitive S urge Current Versus Pulse T rain Duration. Control 8000 Of Conduction May Not Be Maintained. Initial T = 125C J 7500 No Voltage Reapplied Rated VRRM Reapplied 7000 6500 6000 5500 5000 4500 4000 S 330C..C S T eries S 330C..C S T eries 10 100 3500 0.01 0.1 Pulse T rain Duration (s) 1 Number Of Equa l Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 6 www.irf.com ST330C..C Series Bulletin I25155 rev. D 04/03 10000 Instantaneous On-state Current (A) T = 25C J T = 125C J 1000 S 330C..C S T eries 100 0 1 2 3 4 5 6 7 Instantaneous On-state Voltage (V) Fig. 9 - On-state Voltage Drop Characteristics 0.1 T ransient T hermal Impedance Z thJ-hs (K/ W) S teady S tate Value RthJ-hs = 0.09 K/ W (S ingle S ide Cooled) R thJ-hs = 0.04 K/ W (Double S Cooled) ide (DC Operation) 0.01 S 330C..C S T eries 0.001 0.001 0.01 0.1 S quare Wave Pulse Duration (s) 1 10 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 100 Instantaneous Gate Voltage (V) Rec tangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 s b) R ecommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 s (b) T j=-40 C (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a) tp tp tp tp = 4ms = 2ms = 1ms = 0.66ms T j=25 C T j=125 C 1 VGD IGD 0.1 0.001 0.01 (1) (2) (3) (4) Device: S T330C..C S eries 0.1 1 Frequenc y Limited by PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics www.irf.com 7 ST330C..C Series Bulletin I25155 rev. D 04/03 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 04 /03 8 www.irf.com |
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